A systematic and consistent approach to the thermal modeling and measurement of GaN on SiC HEMT power transistors is described. Since the power density of such multilayered wide bandgap structures and assemblies can be very high compared with other transistor technologies, the application of such an approach to the prediction of operating channel temperatures (and hence product lifetime) is important. This white paper discusses how to determine the maximum channel temperature under specific operating modes, particularly for products operating under CW conditions and dissipating large amounts of thermal energy.
This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates.
This paper summarizes the unique advantages of Gallium–nitride power transistors (GaN HEMTs) compared to other power transistor technologies, with examples of where such features have been exploited.
This paper describes experiments conducted by SemiGen that examined the degree of variation in performance of an RF filter circuit design optimized for 12 GHz and 24 GHz. Each were produced via the two processes. It will also provide microwave/millimeter-wave circuit, component, and subsystem engineers a baseline for committing to an intended thin film process, and details the key advantages of uniformity and repeatability of ion beam milling, particularly at higher frequencies.
Sumitomo designers were tasked with developing an innovative high-power, wideband Doherty amplifier covering nearly 1 GHz of operation bandwidth at 2.25 GHz. This case study presents the use of NI AWR software in the design of this amplifier.
Common Mode (CM) filters for high-speed digital signals have been implemented in exploiting electromagnetic bandgap (EBG) structures. One of the challenges in this field involves the miniaturization of EBG-based CM filters for their application to high-speed/high-density communication buses, such as the PCI Express (PCIe) architecture. This white paper presents the design workflow of a removeable EBG-based CM filter component (R-EBG) which would be suitable for a PCIe bus through the use of the CST Studio Suite® and ADS® circuit simulations.
When selecting a filter implementation one factor that is common across all frequencies is optimizing the size of the filter given the application and the required performance. This article discusses the benefits for selecting microstrip filters to deliver higher frequencies in mmWave applications at smaller component sizes.
The R&S®Pulse Sequencer software offers an easy way to simulate moving radar emitters and a moving receiver for EW receiver tests. The software together with the R&S®SMW200A vector signal generator is a powerful radar simulator. This white paper demonstrates how the software enables engineers to generate highly dynamic 3D scenarios in the lab.
As electronics and RF systems have become increasingly complex, the need to catch and fix errors during the design phase of a project has become increasingly important. Catching an error during the design phase is orders of magnitude less expensive to fix than catching it during the manufacturing or test phases.
The requirements for automotive radar sensors in common ranges - such as 24 GHz and 77 GHz - are becoming more stringent and engineers need to understand how design decisions affect performance.
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