Product/Service

XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier

XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier
Mimix Broadband's three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector.

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Datasheet: XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier

Mimix Broadband's three stage 17.0 to 24.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a 27.0 dBm P1dB output compression point across much of the band. The device also includes an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features

  • Excellent Transmit Output Stage
  • Temperature Compensated Output Detector
  • 18.0 dB Small Signal Gain
  • 27.0 dBm P1dB Compression Point
  • 100% On-Wafer RF, DC and Output Power Testing
  • 100% Visual Inspection to MIL-STD-883
  • Method 2010

Click Here To Download:
Datasheet: XP1019-BD - 17.0 To 24.0 GHz GaAs MMIC Power Amplifier