XP1006 8.5-11.0 GHz GaAs MMIC X-Band 10 Watt High Power Amplifier
The XP1006 is a three-stage, X-band, single ended high power amplifier (HPA) with on-chip gate bias circuit. This HPA is designed in a 0.5 um pHEMT power process.
Mimix Broadband's three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband's 0.5 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar and military applications.
Features
- X-Band 10W Power Amplifier
- 21.0 dB Large Signal Gain
- +40.0 dBm Saturated Output Power
- 30% Power Added Efficiency
- On-chip Gate Bias Circuit
- 100% On-Wafer RF, DC and Output Power Testing
- 100% Visual Inspection to MIL-STD-883 Method 2010
Click here to download the datasheet in pdf format.