XB1004 16.0-30.0 GHz GaAs MMIC Buffer Amplifier

Mimix Broadband, Inc. has introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier, which can be operated with all three stages biased in parallel, or with independent bias for input and output stages as required to optimize performance. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 16 to 30 GHz frequency band and can be biased for low noise or high power performance. The MMIC device has a small signal gain of 21 dB with a noise figure of 2 dB across the band when biased for low noise. This device also has 18 dBm P1dB compression point at high power bias.

This high dynamic range amplifier, identified as XB1004, serves as an excellent LNA, LO driver, or saturated or linear buffer amplifier, and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications. The XB1004 is also pin-for-pin compatible with Mimix Broadband's XB1001 device.

Mimix performs 100% on-wafer RF, DC and noise figure testing on the XB1004, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock and production quantities are available 6-10 weeks after order processing.

Click here to download the XB1004 datasheet in pdf format.