Datasheet | May 14, 2019

X-Band, GaN/SiC Power Transistor: IGT1112M90 Datasheet

Source: Integra Technologies, Inc.

The IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under 150µs, 10% duty cycle pulse conditions, the device supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency. For additional specifications and operating parameters, download the datasheet.