The NP15-00 platform delivers high transmit power and efficiency to enable design flexibility and optimization of antenna count, power amplifier size and total array power.
WIN Semiconductors Corp, the world’s largest pure-play compound semiconductor foundry, has developed sample kits for its gallium nitride (GaN) based 0.15μm-gate technology. The NP15-00 mmWave compound semiconductor technology is ideal for transmit power amplifiers used in 5G mmWave radio access networks, satellite communications and radar systems.
Supporting full MMICs, the NP15-00 platform allows customers to develop compact, linear or saturated high power amplifiers up to 35GHz. In the 29GHz band, the NP15-00 technology offers saturated output power of 3 watts/mm with 13 dB linear gain and greater than 50% efficiency without harmonic tuning.
For mmWave active arrays, the higher transmit power and efficiency from the NP15-00 platform affords designers greater flexibility to optimize antenna count, power amplifier size and total array power. Depending on the application, mmWave radio access network (RAN) infrastructure will leverage access points of various sizes, shapes and power levels, and a broad trade-space is crucial to optimize the performance and economics of mmWave active antenna systems.
The NP15-00 gallium nitride technology employs a source-coupled field plate for improved breakdown voltage, and operates at a drain bias of 20 volts. This technology is fabricated on 100mm silicon carbide substrates with through-wafer vias for low inductance grounding.
Contact a WIN Semiconductor regional sales managers for information about sample kits.
WIN Semiconductors Corp at European Microwave Week 2019, booth 1220
WIN Semiconductors Corp. will be celebrating its 20th anniversary and showcasing its compound semiconductor RF and mm-Wave solutions in booth 1220 at the 2019 European Microwave Week being held in Paris, France September 29th through October 4th, 2019.
About WIN Semiconductors Corp
WIN Semiconductors Corp. is the leading global provider of pure-play GaAs and GaN wafer foundry services for the wireless, infrastructure and networking markets. WIN provides its foundry partners a diverse portfolio of Hetero-junction Bipolar Transistor and Pseudomorphic High Electron Mobility Transistor, PIN Diode and Optical Device technology solutions that support leading edge products for applications from 50 MHz to 150 GHz and through light-wave. Custom products built by WIN Semiconductors Corp. are found in a vast array of markets, including smartphone, mobile infrastructure, 3-D sensing, optical communications, CATV, aerospace, defense and automotive applications.
For 20 years, WIN has provided foundry services from its state of the art, ISO9001/14001 certified 150mm GaAs facility headquartered in Taoyuan City, Taiwan. This multi-site manufacturing facility has approximately 3000 employees and provides WIN customers with a diverse array of device technology platforms and value added services, including DC/RF product testing, Cu wafer bumping and advanced package solutions for accelerated product development.