What's Next For Power Electronics? Beyond Silicon

By Emily Yan, Product Marketing Manager

Wide bandgap (WBG) semiconductors, particularly silicon carbide (SiC) and gallium nitride (GaN), are revolutionizing power electronics. Their unique properties, including faster switching speeds, higher thermal resistance, and higher voltage ratings, make them ideal for high-power, high-frequency, and high-temperature applications.

The adoption of WBG semiconductors presents new challenges in power electronics design. Managing electromagnetic interference (EMI) and optimizing thermal performance are crucial for ensuring reliability and functionality. Layout parasitics and high di/dt values can lead to voltage spikes, requiring advanced simulation tools for effective analysis.

WBG semiconductors are driving advancements in various industries. In electric vehicles (EVs), they enable more compact and efficient on-board chargers and traction inverters, extending driving ranges. In data centers, WBG semiconductors reduce energy consumption and carbon emissions by enabling higher server densities. In renewable energy, they offer more reliable power output and cost-effective solutions for storage systems.

This article explores the future of power electronics lies in WBG semiconductors. To navigate this evolving landscape, engineers need advanced simulation tools and a deep understanding of WBG semiconductor properties and their impact on design considerations. As the applications for WBG semiconductors expand, the industry will continue to push the boundaries of power electronics performance and efficiency.