Product/Service

ARF521: VHF Power RF MOSFET

Source: Microsemi Corporation
Designated the ARF521, this RF MOSFET from Microsemi utilizes a newly-patented process and finer geometry that operates reliably at up to 165 volts DC, delivering much higher peak power and RF gain than in previous high voltage parts. The ARF521 is a single die, in a rugged SOE package and is capable of 150 watts output power at up to 81 MHz

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•Datasheet: ARF521: VHF Power RF MOSFET

Designated the ARF521, this RF MOSFET from Microsemi utilizes a newly-patented process and finer geometry that operates reliably at up to 165 volts DC, delivering much higher peak power and RF gain than in previous high voltage parts. The ARF521 is a single die, in a rugged SOE package and is capable of 150 watts output power at up to 81 MHz.

KEY FEATURES

  • Up to 150 Watts Output Power
  • Rugged SOE package
  • Up to 150 MHz Operation
  • 165 V Operation / 500 V BVDSS
  • Class AB Capable
  • Maximized Safe Operating Area (SOA)
  • High Load Mismatch Tolerance
  • Superior Thermal Stability

These high-power, high-voltage RF generators are used extensively for plasma generation, CO2 laser exciters, medical MRI equipment and a wide variety of HF/VHF communications equipment such as broadband linear amplifiers.

To specifically address the needs of these very demanding markets, Microsemi has developed a proprietary ultrahigh voltage wafer fabrication process for making RF power MOSFETs. This doubles the transistor's available safe operating area, dramatically improves its resistance to load mismatch, provides superior thermal stability, and significantly enhances the ability to operate reliably in Class AB.

The 165 volt DC maximum operating voltage simplifies output impedance matching circuitry and facilitates combining a DC power supply and RF power amplifier into an integrated assembly that can significantly reduce size and overall system cost.

Click Here To Download:
•Datasheet: ARF521: VHF Power RF MOSFET