TriQuint Introduces New GSM-EDGE Multi-Mode Power Amplifier Module
New Orleans -- CTIA Wireless 2005 -- TriQuint Semiconductor, Inc. today announced the addition of a new GSM-EDGE power amplifier (PA) module to its handset product line, the TQM7M5001. This module offers efficiency and RF performance over extreme operating environments for linear EDGE applications.
The TQM7M5001 is a 7 mm by 7 mm by 1.1 mm multi-mode power amplifier module for GSM/EDGE applications. It is optimized for high EDGE efficiency and power class E2 operation while maintaining high GSM/GPRS efficiency. Two EDGE quiescent current states are provided to minimize power consumption during backed-off operation. In EDGE mode, the control voltage input is disabled, eliminating the need to apply a constant voltage for proper operation.
The module incorporates highly integrated and rugged InGaP power amplifier die with a CMOS controller. The CMOS controller implements a fully integrated closed-loop power control within the module for GSM operation. This eliminates the need for any external couplers, power detectors and current sensing to assure output power level. These factors result in decreased size that benefits new, slim-line designs while providing greater power efficiency, which can translate into increased talk time and greater data handling capability.
TriQuint's TQM7M5001 is a single module solution ideally suited for GSM/EDGE handsets and GSM/EDGE wireless cards and data links. GPRS class 12 operation is also supported. The module features internal CMOS control circuitry; no external reference voltage input is required.
"The efficiency of this PA in GSM mode supports long handset battery life as phones are used mostly for voice communication," said David Pickett, TriQuint's GSM product marketing director. "At the same time the exceptional linearity provides the phone designer margin in EVM and ACPR for EDGE operation."
Source: TriQuint Semiconductor