TriQuint Introduces LDMOS RF Power Transistors For Wireless Base Stations

Shenzhen, China and Hillsboro, OR -- TriQuint Semiconductor announced its broad portfolio of RF power transistors based on LDMOS (laterally diffused metal oxide semiconductor) technology will now be available world-wide and in China through its Shenzhen and Shanghai offices as well as Avnet Asia Pacific. The wide selection of devices offers manufacturers high-performance, cost-competitive solutions for their RF power amplifier designs.

TriQuint's new RF power transistor line includes products marketed previously by Peak Devices, Boulder, Colorado (USA), that were acquired by TriQuint Semiconductor in August, 2007. This substantial LDMOS power transistor line complements TriQuint's extensive selection of transistors, amplifiers, switch and filter devices for wireless handsets and networked RF communications applications already marketed throughout China.

"We are pleased to expand our product offering for Chinese manufacturers," said Richard Lin, Asia Sales Director. "The new devices added to the TriQuint portfolio cover frequencies from 865 MHz to 2.7 GHz with RF output power from 30 Watts up to 180 Watts using LDMOS technology. Through offices in Shenzhen and Shanghai, and through Avnet Asia Pacific, manufacturers now have access to one of the most complete and diverse portfolios for their RF, power, filter and switching needs."

TriQuint's new RF power transistor line was introduced in Shenzhen, China today during the 13th Annual International IC-China Conference and Exhibition. Each year this event introduces the latest advancements in electronics engineering to manufacturers and suppliers in major cities across China. The 2008 four-city event began February 28th and will end March 11th; tour cities include: Chengdu, Shenzhen, Beijing and Shanghai.

The newly-introduced product portfolio supports the needs of wireless telecommunications base stations and MMDS (multichannel multipoint distribution service) applications, offering a local, reliable source for manufacturers supporting China's continued telecommunications expansion.

Growth of China's wireless networks continues to set records. China now has more mobile subscribers than most countries have citizens (330 million in mid-2007 and growing rapidly.) Governmental decisions to encourage market entry by foreign vendors will bolster growth, according to an iSuppli research forecast1 that China's 3G value-added services market will grow to $19.5 billion in 2011.

RF power transistors based on silicon LDMOS remain among the most popular for signal amplification in RF systems due to their high linearity, gain and efficiency, combined with cost-effectiveness born of multiple developmental generations in the commercial market. These new products complement TriQuint's gallium arsenide (GaAs) transistors, amplifiers and switches as well as surface acoustic and bulk acoustic wave (SAW / BAW) filters now marketed across China.

"Customers now have more choices: the cost-effective, high performance of LDMOS as well as the advantages of highly-efficient, highly-linear GaAs devices that enable the RF engineer to simplify product decisions around customer needs," remarked Mr. Lin.

The new LDMOS product line is available now in China and worldwide through TriQuint's network of direct and representative salespeople.

SOURCE: TriQuint Semiconductor, Inc.