Article | January 2, 2024

The Transition From Si To SiC In Power Electronics

Source: Qorvo

Si has been the preferred semiconductor material for power electronics applications for a long time. However, recently there has been a shift towards SiC devices due to the advantages they offer in various markets such as electric vehicles, infrastructure, renewables, and data centers. SiC's wider bandgap and higher breakdown voltage lead to improved performance, energy efficiency, and reduced power losses. SiC MOSFETs and SiC FETs offer numerous benefits over traditional Si devices, including higher thermal conductivity, lower energy loss, and higher switching frequency. The electro-thermal benefits of SiC are a primary reason behind their increasing use. They offer efficiency in managing high power levels while minimizing power loss and meeting stringent thermal requirements. As global initiatives promote 'green' energy solutions, SiC emerges as a go-to technology, providing excellent voltage-blocking capabilities and contributing to power efficiency, smaller size, lighter weight, and lower overall cost. This SiC overview is a compelling read for anyone interested in the future of efficient power electronics and the booming role of SiC technology in driving transformative advancements across diverse applications.

access the Article!

Get unlimited access to:

Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.

Subscribe to RF Globalnet X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.


Subscribe to RF Globalnet