Tagore Introduces New High-Power GaN SPDT Switches With Up To 550 W Peak Power Handling For Radar & Cellular Infrastructure

Tagore Technology Inc., a pioneer of high-power GaN-based RF switches, today announced the introduction of the TS8728N and TS8729N asymmetrical reflective single-pole two throw (SPDT) switches designed for broadband, high-power switching applications. The new feature-rich switches offer best-in-class insertion loss, power handling, high linearity, and high isolation performance and are well-suited for L & S-Band Radar & Cellular infrastructure applications.

The TS8728N is designed to operate at 400W of pulse power with 2ms pulse width and 20% duty cycle in S band whereas TS8729N is designed to operate at 550W of pulse power with 2ms pulse width and 20% duty cycle. Th devices operate with a single +5 V supply and switch with a single control voltage (0 to 3 V). They can be tuned to specific RF bands within the range of 0.3 to 5.0 GHz by modifying select external SMT components.

These new devices are compact, integrated high-power single-pole, double-throw (SPDT) with on board driver circuits. TS8729N can cover 500MHz to 2.0GHz and provide very high RF power handling & high linearity within a small package size. The TS8728N covers 0.5 to 5.0GHz & has been optimized for switching speed.

“The TS8728N and TS8729N feature low TX and RX insertion loss, high isolation with very low DC power consumption and require minimal external components, enabling a smaller PCB footprint” said Klaus Buehring, Tagore Technology’s Chief Sales and Marketing officer.The TS8728N and TS8729N are packaged in a compact Quad Flat (QFN) 5x5mm 32 lead plastic package.”

For full datasheets and samples contact Tagore Technology’s Sales representative at rfgan@tagoretech.com.

About Tagore Technology

Tagore Technology was founded in January 2011 to pioneer Gallium Nitride-on-Silicon (GaN-on-Si) and GaN-SiC semiconductor technology for Radio Frequency (RF) and power management applications. We are a fabless semiconductor company with design centres in Arlington Heights, Illinois, USA and Kolkata, India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap semiconductor technologies that help address RF and power design challenges for our customers and accelerate time-to-market for a wide range of applications. For more information visit www.tagoretech.com

For EVBs and additional application information please contact:

Name: Anindita Ray
Email: ray0521@tagoretech.com