Solid State High Power Amplifier: dB-8059 Datasheet

The dB-8059 is a wideband Gallium Nitride (GaN) Solid State Power Amplifier (SSPA) engineered for high-power performance across a broad frequency range of 2.0 to 18.0 GHz. Delivering up to 200 Watts of continuous wave (CW) power at midband, it is designed for demanding applications such as electronic warfare (EW), electronic countermeasures (ECM), simulations, and multi-band communication systems.

Its RF path operates with proprietary low-noise, high-efficiency power supply designs, while an embedded microcontroller manages interface, control, protection, and status monitoring. Standard remote operation is available via RS-485, with optional interfaces including RS-232, RS-422, Ethernet, CANBUS, or custom configurations.

The amplifier achieves a minimum small-signal gain of 50 dB with 0 dBm input drive, supporting a 100% duty cycle. Power output varies with frequency: 150 W from 2–4 GHz, 200 W from 4–9 GHz, 150 W from 9–16 GHz, and 100 W from 16–18 GHz. It is built for reliability under load, meeting compliance with a 1.5:1 VSWR and no-damage protection up to 2.5:1 VSWR.

Compact and rugged, the dB-8059 measures 15" x 13" x 12", weighs approximately 100 lbs., and incorporates integral forced-air cooling for thermal stability. It operates over a wide environmental range, including -40°C to +40°C ambient temperatures, up to 15,000 feet altitude, and compliance with MIL-STD 810 for humidity, rain, and salt fog.