Simulation-Based Methodology For broadband GaN Power Amplifier Design

This application note presents a simulation-based flow methodology in designing broadband GaN power amplifiers. This method uses load-line, load-pull, and real-frequency synthesis techniques for the design of a Class F amplifier using the Qorvo 30 W GaN high electron mobility transistor (HEMT). The Modelithics GaN HEMT nonlinear model for the Qorvo transistor in conjunction with NI AWR Design Environment™ design software enabled designers to reach goals of a 25 W minimum output power, a bandwidth of 1.8 – 2.2 GHz, and a maximum power-added efficiency (PAE). Download the full paper for a more in-depth overview of the design, the design process, and the measurement results.