SiGe High Isolation Buffer Amplifiers
Models SGA-1163 & 1263 are Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) amplifiers
N/A1163 & 1263 are Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) amplifiers offering good isolation and flat gain response for application up to 6 GHz. These RFICs are 2-stage designs that provide isolation of up to 40dB at 2 GHz and are fabricated using the latest SiGe HBT 50 GHz Ft process. These buffer amplifiers are ideal for use in oscillator applications covering cellular, ISM and narrowband PCS bands. The SGA-1163 operate from DC to 4 GHz and the SGA-1263 operates from DC to 6 GHz in surface-mount SOT-363 plastic packages.
<%=company%>, 726 Palomar Ave., Sunnyvale, CA. Phone: 408-616-5400; Fax: 408-739-0970.