Application Note

Application Note: Gunn Diode Fundamentals

Source: Microsemi Corporation
Gunn diodes are used as transferred electron oscillators (TEO) by using the negative resistance property of bulk Gallium Arsenide. Greater than about an electric field of 3.2 KV/cm, the electrons in N type GaAs move from a high-mobility, low-energy valley to another valley where the mobility is lower. Consequently, the net electron velocity is lower. This negative resistance is used for generation of microwave power.
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