News | November 29, 2012

Richardson RFPD MWE Japan 2012 Line-Up

Includes New Products from the World's Leading Suppliers of RF, Wireless and Energy Technologies

Richardson RFPD, Inc. recently announces its participation and the line-up of suppliers and products it will feature at MWE Japan 2012, to be held at Exhibition Hall-D, Pacifico Yokohama, Japan, November 28-30, 2012.

At its booth #B604, Richardson RFPD will present:

ANADIGICS Small Cell Power Amplifiers: Designed for WCDMA, HSDPA and LTE in Bands 1, 2, 4, 7, and 10, offering up to +27 dBm linear WCDMA (64 DPCH) power and up to 18% PAE in linear region (64 DPCH).

Analog Devices A/D Converters: Dual, 14-Bit, 80 MSPS/125 MSPS ADCs from ADI, featuring on-chip sample-and-hold circuit designed for low cost, low power, small size, ease of use.

Freescale Semiconductor Airfast Power Transistor: 2.1 GHz 350w LDMOS with 15 dB gain, 56 dBm P3dB and drain efficiency of 48% @ 8dB OBO (48 dBm).

Freescale Semiconductor Extremely Rugged RF LDMOS: MOSFETs combine enhanced ruggedness of 65:1 VSWR and wideband operation over a broad, 1 MHz to 2 GHz frequency range.

GORE Phaseflex 0G Cable/RF Test Assemblies: 18 GHz assemblies for high-throughput production test applications feature flexible, robust strain-relief boots and easy grip, quick-turn connectors, along with exceptional phase and amplitude stability.

MA-COM Tech GaN Power Transistors: Operating up to 3.5 GHz, these pulsed power devices are designed for L-Band and S-Band applications up to 250W and are available as discrete transistors or high power pallets.

MA-COM Tech High Power Switches: SPDT, high linearity, PIN diode Tx/Rx switches that are well-suited for high power LTE and TD-SCDMA infrastructure, WiMAX, and military radio applications

Microsemi GaN: 700W Peak Power L-Band GaN HEMT, operating up to 1030 MHz and offering 21 dB gain and 75% drain efficiency under Mode-S ELM pulse format.

Peregrine Semiconductor DuNE DTCs: 5-bit 32-state Digitally Tunable Capacitors operating from 100 - 3000 MHz and featuring 3-wire, SPI compatible interface. 

TriQuint Semiconductor LNAs: New wideband LNAs covering up to 4.0 GHz, with noise figure as low as 0.40 dB at 1.9 GHz, 20 dB associated gain and +20 dBm P1dB at 5V/65mA. Ideal for wireless infrastructure, repeaters, RRH, and TMA.

TriQuint Semiconductor GaN RF Power Products: Including transistors with >55W output power and covering up to 6GHz, switches up to 18 GHz with power handling as high as 40W with high isolation, and a 2.5-6 GHz power amplifier with +45.5 dBm Psat and 26 dB gain.

TRU High Power RF Cable Assemblies: Offering kW power handling up to 10 GHz and up to 6X power handling vs. standard RF assemblies. Available with a wide range of connectors and cable types.

About Richardson RFPD, Inc.
Richardson RFPD, Inc., an Arrow Electronics company, is a global leader in the RF and wireless communications, power conversion and renewable energy markets. Relationships with the industry’s top component suppliers enable Richardson RFPD to meet the total engineering needs of each customer. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide support for all aspects of customers’ go-to-market strategy, from prototype to production. For more information,visit

SOURCE: Richardson RFPD, Inc.