News | February 28, 2018

Richardson RFPD Introduces New RF Power LDMOS 150 W Transistor For S-Band Radar From NXP

2700–3100 MHz Airfast transistor, suitable for use in pulse applications

Richardson RFPD, Inc. announced recently the availability and full design support capabilities for a new 150 W peak power LDMOS transistor from NXP Semiconductors.

The AFT31150N is designed for applications operating at frequencies between 2700 MHz and 3100 MHz. It is suitable for use in pulse applications.

The new transistor is characterized with series-equivalent large-signal impedance parameters and is internally matched for ease-of-use. It is qualified up to a maximum of 32 VDD operation, with integrated ESD protection and greater negative gate source voltage range for improved Class C operation. The new device is included in Included in NXP’s product longevity program with assured supply for a minimum of 15 years after launch.

The AFT31150N is ideally suited for commercial S-band radar systems, maritime radar and weather radar applications.

Additional key features of the AFT31150N include:

  • P1dB: +51.8 dBm
  • Power gain: 17.0 dB @ 3100 MHz
  • Efficiency: 50%
  • Thermal resistance: 0.042 °C/W

To find more information, or to purchase this product today online, please visit the AFT31150N webpage. Please find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from NXP, please visit the NXP storefront webpage.

About Richardson RFPD

Richardson RFPD, an Arrow Electronics company, is a global leader in the RF, wireless, IoT and power technologies markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production. For more information, visit www.richardsonrfpd.com.

SOURCE: Richardson RFPD, Inc.