Richardson RFPD Announces In-Stock Availability Of New Wideband RF 125 W Continuous Wave GaN Transistor From NXP

Optimized for wideband operation up to 2700 MHz, includes input matching for extended bandwidth performance

Richardson RFPD, Inc., an Arrow Electronics company, announced today the availability and full design support capabilities for a new RF-power, gallium nitride transistor from NXP Semiconductors.

The MMRF5018HSR5 is a 125-watt, continuous wave, RF power transistor optimized for wideband operation up to 2700 MHz. It includes input matching for extended bandwidth performance.

Key features include:

• High power density
• Decade bandwidth performance
• Enhanced thermal resistance packaging
• Power gain: 12.0 dB
• Drain efficiency: 64.4% (typ.)
• High ruggedness: > 20:1 VSWR

With its wideband capabilities, high gain, ruggedness and drain efficiency, the MMRF5018HSR5 offers a complete solution for multiband communication applications. It is also versatile for a range of CW, pulse and wideband RF applications.

An evaluation board is available.

To find more information or to purchase this product today online, visit the MMRF5018HSR5 webpage (https://www.richardsonrfpd.com/rf-microwave-insights/nxp-mmrf5018hs/?utm_campaign=NXP-MMRF5018HSR5&utm_source=PR&utm_medium=ProductLink).