Richardson RFPD Announces Availability Of Compact Airfast GaN Reference Design From NXP

Orderable reference design for A3G26D055N 55 W peak GaN discrete transistor

Richardson RFPD, Inc., an Arrow Electronics company, announced today the availability and full design support capabilities for a new reference design from NXP Semiconductors.

The A3G26D055N-100 is an orderable reference design for NXP’s A3G26D055NT4, a 100–2690 MHz, RF power discrete GaN HEMT housed in a DFN 7 mm x 6.5 mm over-molded plastic package. It has an unmatched output allowing for wide frequency range utilization. The transistor is designed for cellular base station applications requiring wide instantaneous bandwidth capability.

The A3G26D055N-100 circuit optimizes the device from 100–2500 MHz, with 12 W CW and 11 dB gain by utilizing half of the device. The compact circuit (7 cm x 5 cm) is available for order from Richardson RFPD, and the circuit information is licensable from NXP.

Typical performance:

VDD = 48 Vdc, IDQ = 45 mA (VGG = ~ -2.7 Vdc), Pin = 1 W, CW

To find more information or to purchase this product today online, visit the NXP A3G26D055N-100 webpage. The product is also available by calling 1-800-737-6937 (within North America) or find a local sales engineer (worldwide) at Local Sales Support. To learn about additional products from NXP, visit the NXP storefront webpage.

About Richardson RFPD
Richardson RFPD, an Arrow Electronics company, is a global leader in the RF, wireless, IoT and power technologies markets. It brings relationships with many of the industry’s top radio frequency and power component suppliers. Whether it’s designing components or engineering complete solutions, Richardson RFPD’s worldwide design centers and technical sales team provide comprehensive support for customers’ go-to-market strategy, from prototype to production. For morre information, visit www.richardsonrfpd.com.