RFMW Introduces 250-Micron Discrete FET From TriQuint Semiconductor

RFMW, Ltd. announces design and sales support for TriQuint Semiconductor’s TGF2025 high efficiency heterojunction power FET. This discrete device utilizes TriQuint’s proven standard 0.25um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions.

The TGF2025 provides 24dBm typical output power at P1dB with gain of 14dB and 58% power-added efficiency. This performance makes the TGF2025 appropriate for high efficiency applications in hi-rel circuits and broadband commercial or military subsystems. Available as DIE, the TGF2025 has a protective overcoat layer with silicon nitride providing environmental robustness and scratch protection for hybrid designs.

Additional information on the TGF2025 may be found on the RFMW web site at http://www.rfmw.com/ProductDetail/TGF2025-TriQuint-Semiconductor-Inc/457677/pid=938

About RFMW, Ltd.
RFMW Ltd. is a specialty electronics Distribution Company focused exclusively on serving customers that require RF and microwave components and semiconductors, as well as component engineering support. The company continues to expand its list of products from selective suppliers with RF/microwave expertise. RFMW deploys a highly experienced, skilled and technically competent team to assist customers with component selection and fulfillment. For more information, visit www.rfmw.com.