RF Transistor: 2729GN-500V
Source: Microsemi Corporation
Microsemi’s 2729GN-500V RF transistor is based on GaN on SiC technologies and targeted at high-power air traffic control airport surveillance radar applications. The 2729GN-500V delivers unparalleled performance of 500W of peak power with 12 dB of power gain and 53% drain efficiency over band 2.7 to 2.9 GHz band.
Additional features include:
- Standard pulse burst format: 100µs, 10% DF (microseconds);
- 500W power output;
- High power gain: >11.5 dB min;
- Drain bias − Vdd: +50V;
- Low thermal resistance: 0.19 degrees C/W;
- Single-ended package built with 100% percent high-temperature gold metallization and wires in a hermetically solder-sealed package.
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Contact Microsemi for more information.
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