48V GaN on Si RF Power Transistor: NPT2018
Source: Nitronex Corporation
The NPT2018 is a GaN-on-Si (gallium nitride-on-silicon) RF power transistor with 48V operation. It’s tunable from DC to 2.5 GHz, has a greater than 60% drain efficiency, and comes in an industry standard plastic package.
This RF power transistor has been designed for CW, pulsed, and linear operation with output power levels to 12W. It’s ideal for applications involving avionics, defense communications, VHF/UHF/L-band radar, land mobile radio, wireless infrastructure, and in ISM applications.
For information on RF and DC specifications, maximum ratings and more, download the datasheet.
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