Case Study

Reliability Of 150nm, 28 V GaN HEMT Process Up To Ka-Band

Source: Wolfspeed, A Cree Company
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Wolfspeed has reported the fabrication process, device characteristics, and MMIC RF performance of a high-performance GaN-on-SiC HEMT featuring a 150 nm gate length (V5 process) for Ka-band applications. Read the full case study for more results.

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