Reliability Of GaN/AlGaN HEMT MMIC Technology On 100-mm 4H-SiC

This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The Cree V3 process technology is based on a 0.4 µm gate length GaN HEMT designed for 28 V applications and includes metal-insulator-metal (MIM) capacitors, NiCr thin film resistors, and low-resistance source vias that are small enough to embed inside the transistor technology. Download the full paper for more information.