Reliability Of GaN/AlGaN HEMT MMIC Technology On 100-mm 4H-SiC
Source: Wolfspeed, A Cree Company
By Donald A. Gajewski, et al.
This paper reports the reliability performance of the Cree, Inc., GaN/AlGaN HEMT MMIC process technology, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. The Cree V3 process technology is based on a 0.4 µm gate length GaN HEMT designed for 28 V applications and includes metal-insulator-metal (MIM) capacitors, NiCr thin film resistors, and low-resistance source vias that are small enough to embed inside the transistor technology. Download the full paper for more information.
access the White Paper!
Log In
Get unlimited access to:
Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue.
X
Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.
Subscribe to RF Globalnet
X
Subscribe to RF Globalnet
This website uses cookies to ensure you get the best experience on our website. Learn more