White Paper

Reliability Comparison Of 28 V – 50 V GaN-on-SiC S-Band And X-Band Technologies

Source: Wolfspeed, A Cree Company
cree2

This paper discusses the reliability performance of Wolfspeed GaN/AlGaN high electron mobility transistor (HEMT) MMIC released process technologies, fabricated on 100 mm high purity semi-insulating (HPSI) 4H-SiC substrates. Download the full white paper to learn more.

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