Push-Pull Amps

GaAs push-pull power amplifier FETs for world standard 3rd generation wireless voice and data systems may be used in >600-Watt (peak) W-CDMA amplifiers and are targeted for base station and repeater applications. Features of the three FETs include high "power added efficiency" and drift-free depletion mode GaAs FET design.

Specifications:

• FLL1500IU-2A: 51.8 dBm (>150 Watts, 45% Pae) @2.1 GHz – 2.4 GHz
• FLL600IQ-3: 48 dBm (>60 Watts, 48% Pae) @2 GHz – 2.7 GHz
• FLL400IQ-3: 45.5 dBm (>35 Watts, 43% Pae) @2 GHz – 2.7 GHz

Fujitsu Compound Semiconductor, 2355 Zanker Road, San Jose, CA 95131-1138 Phone: 408-232-9500