Product/Service

Power Transistors And Modules For S-Band Radar

Source: Microsemi Corporation

MicrosemiPowerMods180-200
Microsemi's new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.

Microsemi's new S-Band power modules provide a complete design solution, combining two Microsemi transistors in hermetically sealed packages, with input/output circuitry matched to 50 ohm. Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.

The new Microsemi products include 65W and 100W power transistors, designated 3134-65M and 3134-100M, and two Power Solution Modules™ designated 3134-180P and 3134-200P, rated at 180W and 200W respectively. All are designed for S-Band pulsed radar in air traffic control and military applications.

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Datasheet: 3134-65M - 65W Power Transistor For S-Band Radar
Datasheet: 3134-100M - 100W Power Transistor For S-Band Radar
Datasheet: 3134-180P - 180W Power Solution Module For S-Band Radar
Datasheet: 3134-200P - 200W Power Solution Module For S-Band Radar