Datasheet | July 29, 2015

6W Discrete Power Transistor: TGF2023-2-01 Datasheet

Source: Qorvo
6W Discrete Power Transistor: TGF2023-2-01 Datasheet

The TGF2023-2-01 is a 6W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation. Download the datasheet for more specifications.


Get unlimited access to:

Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.

Subscribe to RF Globalnet X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.


Subscribe to RF Globalnet