The T2G6000528-Q3 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation. Download the datasheet for more specifications.