Datasheet | September 1, 2015

2x120W, 36V, DC-3.5 GHz Power Transistor: T1G4020036-FL Datasheet

Source: Qorvo

The T1G4020036-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics. Download the datasheet for more specifications.