The T1G2028536-FL is a 285W discrete GaN on SiC HEMT with an operating frequency in the DC – 2 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics. Download the datasheet for more specifications.