News | November 24, 2008

NXP Launches LDMOS Transistor For L-Band Radar Applications

Eindhoven, Netherlands – NXP Semiconductors recently launched its latest Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor for L-band radar applications delivering breakthrough RF output power of 500W at frequencies between 1.2GHz and 1.4GHz.

Targeted at a wide range of sensitive radar communication applications, such as aviation and marine traffic collision avoidance systems (TCAS), NXP's LDMOS L-band RF power transistor sets new standards for efficiency (>50 percent drain efficiency), gain (17dB) and ruggedness at 500W power level when compared to competing bipolar and field-effect transistor (FET) devices.

"As the first company that launched LDMOS for L- and S-band applications, NXP's high-efficiency LDMOS RF power transistor portfolio is establishing a new industry standard by providing our customers with the ultimate performing and most rugged transistor available on the market," said Mark Murphy, international product marketing manager, RF power products, NXP Semiconductors. "The breakthrough in RF output power of 500W is the result of NXP's collaborative approach with customers, which helped us to deliver easy to design-in transistors for quick time-to-market."

Key performance parameters for NXP's L-band RF transistor (BLL6H1214-500), include:

  • 500W peak output power (at 1.4GHz, 100µs pulse width, 25 percent duty cycle)
  • 17dB gain
  • 50 percent drain efficiency
  • Fully qualified for TCAS (traffic collision avoidance systems)
  • Improved ruggedness – overdrive without risk up to 5dB
  • Improved pulse droop (<0.2dB)
  • Supply Voltage 50V
  • non-toxic packaging & ROHS compliance

    • NXP's device combines the power density of bipolar with the advantages of LDMOS technology for L- band Radar design, and allows for a replacement of the BeO containing packages by an environmentally friendly ceramic package.

    SOURCE: NXP Semiconductors