News | February 7, 2011

New S-Band Radar Transistor Announced

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Integra Technologies is proud to announce another high powered addition to their industry leading S-band LDMOS portfolio - Part number ILD3135M180. The ILD3135M180 is designed for S-Band radar applications operating over the 3.1 – 3.5 GHz instantaneous frequency band. Characterized under pulsed conditions with 300us pulse width and 10% duty cycle, it typically provides over 200W of peak output power with 11dB gain. The single-ended broadband test fixture includes a temperature compensated bias network and is specified to operate in Class AB. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit. Sampling now.

SOURCE: Integra Technologies