New RF CMOS SPDT Switch Extends Performance to 3 GHz

Single control input, 2kV HBM ESD ideal for wireless apps

SAN DIEGO -- Peregrine Semiconductor Corp. today introduced the world's highest performance, general use RF CMOS SPDT switch. The new PE4259 extends performance to 3 GHz making it an optimal solution for any wireless application that can benefit from the advantages of RF CMOS.

The PE4259 RF switch provides many advances over competing technology including a single control input, high ESD tolerance (2 kV HBM), low insertion loss (0.3 dB, 1 GHz), high IP3 (60 dBm, 2 GHz) and isolation (32 dB, 1 GHz). The device is constructed using Peregrine's patented UTSi (Ultra-Thin-Silicon) silicon-on-sapphire technology, which reduces up to five blocking capacitors and a control line compared to a similar GaAs device.

"The PE4259 enables customers to reduce part count, alleviate ESD concerns and simplify their design, inevitably leading to a higher performing, lower cost system," said Jim Cable, CEO of Peregrine Semiconductor. "Our early adopters confirm that the PE4259 makes their design work easier and shortens time to market. Several have since entered volume production."

The PE4259 RF switch is designed to cover a broad range of applications from DC through 3.0 GHz. This reflective switch integrates on-board CMOS control logic with a low voltage CMOS-compatible control interface, and can be controlled using either single-pin or complementary control inputs. An insertion loss of 0.3 dB at 1 GHz and 0.45 at 2 GHz are typical. Using a nominal +2.3-3.0 volt power supply, a typical input 1 dB compression point of +34 dBm can be achieved. Product samples, unit pricing and volume production are available now through Peregrine and its worldwide distribution partner, Richardson Electronics.

Source: Peregrine Semiconductor