New Product: CHA6357-98F – 27 – 31 GHz 5W High Power Amplifier

The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of Power Gain. This amplifier exhibits 33dBm Linear Power with -30dBc ACPR and 27dB Gain. In addition, the CHA6357 provides high linearity with a low consumption […]

The CHA6357-98F is a bare die three-stage GaN Power Amplifier operating between 27GHz and 31GHz. This amplifier typically provides 5W of saturated Output Power associated to 23% and 24dB of Power Gain. This amplifier exhibits 33dBm Linear Power with -30dBc ACPR and 27dB Gain. In addition, the CHA6357 provides high linearity with a low consumption when operated with output power back-off. It therefore can be used as a Driver of HPA.

The component is internally matched to 50Ω at both the input and output. It integrates output power detector and ESD RF protection. It is manufactured on a robust GaN-on-SiC HEMT process.

It is well suited for VSAT, SatCom uplink, 5G communication and Radio links applications.

More information (https://www.ums-rf.com/product/cha6357-98f-27-31-ghz-5w-high-power-amplifier/)