New 200 MHz-2000 MHz, 3W GaN Wideband Power Amplifier
RFHIC's HM0220-03A GaN Hybrid IC (HIC) is a wideband power amplifier designed for continuous wave applications such as military communications, electronic warfare, wireless infrastructure, two-way radios, medical equipment, and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, this high-performance amplifier achieves PAE (power added efficiency) of 30% minimum, and power over a large instantaneous bandwidth. This new GaN hybrid IC, HM0220-03A, is 50Ω input/output matched packaged in a very small form factor 20.5 x 10 x 2.3(mm) AIN (aluminum nitride) board that provides excellent thermal dissipation. It operates in the 200 to 2000 MHz range, and has output power of 3W, or 35dBm (typ.). The amplifier is equipped with metal lid which can also release heat upwards.
Electrical Specifications (Ta=25°C)
|
Parameter |
Unit |
Min |
Typ |
Max |
Test Condition |
|
Frequency Range |
MHz |
200 |
|
2000 |
ZS = ZL= 50Ω |
|
Power Gain |
dB |
|
34 |
|
Amp1: Idq = 150mA |
|
Gain Flatness |
|
±1.0 |
|
||
|
Input Return Loss |
|
-10 |
|
||
|
Pout |
dBm |
|
35 |
|
|
|
PAE |
% |
30 |
|
|
|
|
Ids |
mA |
|
400 |
|
|
|
IMD |
dBc |
|
-25 |
|
Pout=29dBm (each tone) |
|
Max. Gate Current |
mA |
|
4 |
|
|
|
Supply Voltage |
V |
|
5 |
|
Drive Bias (Vd1) |
|
V |
|
18 |
|
Main Bias (Vd2) |
|
|
Rising Time of Pout >90% |
µsec |
|
10 |
|
Lead and Trail Edge of |
|
Weight |
g |
|
|
2 |
|
Features
- Advanced GaN HEMT
- AlN board Technology
- In/Out Impedance Matching
- Surface Mount Technology
- 18V Operation, Output Power of 3W
- 200MHz to 2000MHz Instantaneous Bandwidth
- Power Added Efficiency 30% min
Applications
- Military Communication
- Electronic Warfare
- Two-way Radios
- Wireless Infrastructure
- General Purpose Tx Amplification
For more information on HM0220-03A, click GaN Hybrid Amplifiers.
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Metal Lid for Thermal Emission |
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|
|
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This modern marvel succeeds by fulfilling requirements of efficiency and performance in a fraction of a form factor, and doing so by draining the heat directly through the lid, rather than a heat sink underneath. Both achievements highlight the technical superiority of RFHIC's GaN products. |
About RFHIC
RFHIC, a global leader in the design and manufacture of RF & Microwave component with a comprehensive product portfolio from discrete to integrated high power amplifiers, utilizes the most sophisticated technologies including hybrid solutions of GaN (Gallium Nitride), and is a cost effective solution provider to the customers. RFHIC has a strong relationship with CREE to provide the most mature GaN technology in the market. RFHIC is an ISO 9001 and 14001 certified company providing reliable & dependable products. Being a 'One-stop facility' solution provider, we are capable of processing MMIC, Die Attach, Wire Bonding, Packaging, Chip on Board, Hybrid, SMT Line, RF Test Line, and Quality Control actions all in our facility. In addition, the Restriction of Hazardous Substances Directive (RoHS), and Lead (Pb)-Free are some of the programs we have implemented. For more information, visit http://www.rfhic.com.
Source: RFHIC