New 1.8GHz 80W GaN Doherty Power Amplifier
RFHIC model RTP18080-20 employs GaN (Gallium Nitride) technology to provide 49dBm of average output power from 1805-1880MHz. With 40% efficiency, this amplifier is the key for current LTE wave of Remote Radio Head (RRH) solutions, which complement existing macro base stations. The amplifier is 162 x 125 x 18.8 in mm in dimensions, and utilizes high power GaN-SiC transistors.
In various industries, companies strive to be eco-friendly, and the RF industry is no exception. Carbon dioxide (chemical formula CO2) reduction has been an important priority due to environmental concerns, and RFHIC is contributing to the trend by introducing one of the most efficient power amplifiers. This amplifier, integrated with Doherty configurations, is 100% RF tested and thermal aged for immediate application to your LTE system.
|
Parameter |
Unit |
Min |
Typ |
Max |
|
|
Frequency Range |
MHz |
1805 |
|
1880 |
|
|
Operating Bandwidth |
MHz |
|
75 |
|
|
|
Average Output Power |
dBm |
|
49 |
|
|
|
Peak Output Power |
dBm |
56.5 |
|
|
|
|
ACLR (LTE 10MHz 1FA) |
Pre-DPD |
dBc |
|
-26 @ ±10MHz |
|
|
Post-DPD |
|
-53 @ ±10MHz |
|
||
|
RF Gain @ 25°C |
dB |
57 |
|
|
|
|
Gain Variation |
dB |
±3dB @ frequency range, -30 ~ +60°C |
|||
|
Gain Flatness |
dB |
|
±3 |
|
|
|
Input Return Loss |
dB |
|
|
-12 |
|
|
Output Return Loss |
dB |
|
|
-17 |
|
|
Operating Voltage |
V |
|
VDC1 : 5.6 |
|
|
|
Current Consumption |
A |
|
0.36 @ 5.6V |
|
|
|
Efficiency |
% |
|
40 |
|
|
|
Feedback Output Level @ 49dBm |
dBm |
|
10 |
|
|
|
Operating Temperature |
°C |
-30 |
|
60 |
|
Product Features
- Solid-state linear design
- Small and light weight
- Suitable for US-PCS
- 50Ω in/output impedance
- High reliability and ruggedness
- Built in Output Isolator
- Built in Monitoring Circuit
- High Efficiency
About RFHIC
RFHIC, a global leader in the design and manufacture of RF & Microwave component with a comprehensive product portfolio from discrete to integrated high power amplifiers, utilizes the most sophisticated technologies including hybrid solutions of GaN (Gallium Nitride), and is a cost effective solution provider to the customers. RFHIC has a strong relationship with CREE to provide the most mature GaN technology in the market. RFHIC is an ISO 9001 and 14001 certified company providing reliable & dependable products. Being a 'One-stop facility' solution provider, we are capable of processing MMIC, Die Attach, Wire Bonding, Packaging, Chip on Board, Hybrid, SMT Line, RF Test Line, and Quality Control actions all in our facility. In addition, the Restriction of Hazardous Substances Directive (RoHS), and Lead (Pb)-Free are some of the programs we have implemented. For more information, visit http://www.rfhic.com.
Source: RFHIC