New C-Band Radar Transistor

Integra Technologies, Inc. announces a C-band transistor, IGN4450M50. This transistor is an input matched, gallium nitride on silicon carbide (GaN on SiC) high electron mobility transistor. This part is designed for C-Band radar applications operating over the 4.4 – 5.0 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 50 watts of peak output power with 15dB gain typically. Specified operation is with Class AB bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening.

SOURCE: Integra Technologies, Inc.