New Broadband GaN HEMT Device

IGN0110UM100 is a dual-lead packaged gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100MHz – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain. Specified operation is with Class AB bias. It is also operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening.