New Amplifier Modules From Hittite Deliver Ultra-Low Phase Noise
Hittite Microwave Corporation, the world class supplier of complete MMIC based solutions for communication & military markets, has introduced a new series of GaAs HBT Ultra Low Phase Noise Amplifier modules which are ideal for high performance applications in microwave radio, military & space, radar systems, test instrumentation and synthesizers from 1.5 to 11 GHz. The HMC-C076, HMC-C077, and HMC-C079 are GaAs HBT Ultra-Low Phase Noise Amplifier modules which are rated from 7 to 11 GHz, 1.5 to 5.0 GHz, and 3 to 8 GHz, respectively.
These amplifiers provide a phase noise contribution of -180, -157 and -168 dBc/Hz at 10 kHz offset respectively, enabling superior modulation accuracy in high resolution radar and synthesizer applications. These amplifier modules also provide high dynamic range and exhibit 9, 14, and 11 dB of gain, 6, 4.5, and 6 dB noise figure and up to +33, +26.5 and +25 dBm of output IP3 respectively. Also ideal for transceiver architectures, these modules deliver up to +25, +22 and +21 dBm of saturated output power respectively with good gain flatness and minimal variation over temperature.
Specified for -55 °C to +85 °C temperature operation and housed in miniature hermetic modules with field replaceable SMA connectors, these modules operate from a +7 V single supply, and consume 300, 170, and 110 mA respectively.
These modules complement Hittite's expanding line of low phase noise amplifier products which are available in die, SMT and connectorized module formats, with frequency coverage up to 18 GHz.
All connectorized module products are available from stock and can be ordered via the company's e-commerce site or via direct purchase order.
About Hittite Microwave Corporation
Hittite Microwave Corporation is an innovative designer and manufacturer of analog and mixed-signal ICs, modules, subsystems and instrumentation for digital, RF, microwave and millimeterwave applications covering DC to 110 GHz. Our RFIC/MMIC products are developed using state-of-the-art GaAs, GaN, InGaP/GaAs, InP, SOI, SiGe, CMOS and BiCMOS semiconductor processes utilizing MESFET, HEMT, pHEMT, mHEMT, HBT and PIN devices. Our custom and standard products support a wide range of wireless / wired communications and radar applications for Automotive, Broadband, Cellular/4G, Fiber Optics, Microwave & Millimeterwave Communications, Military, Test & Measurement, and Space markets.
SOURCE: Hittite Microwave Corporation