NEC Releases New SiGe HBT For VCO, LNA Applications
Santa Clara, CA -- NEC's newest SiGe HBT is designed for VCO and LNA applications from 800 MHz to 6 GHz. The NESG2107 features improved frequency stability with low phase noise and low pushing/pulling performance. The 1/f noise corner frequency for this SiGe transistor is 5 KHz, compared to 20 KHz in standard silicon bipolar devices.
The NESG2107 also features low noise figures, high gain at low operating bias, and low DC power consumption. It is available in two Pb-Free package options: NEC's 19 package and the new, ultraminiature M33 package. The flat-lead M33 measures .64 mm x .84 mm and is .4 mm high, making it ideal for miniature VCO modules and other designs that demand compact, low profile components. Specifications include:
| 19 Pkg | M33 Pkg | |
| Noise Figure @ 2.0 GHz | 0.9 dB typ | 0.9 dB typ |
| Associated Gain @ 2.0 GHz | 9.0 dB typ | 10 dB typ |
| DC Power Consumption | 1V @ 5mA | 1V @ 5mA |
The NESG2107 is fabricated using NEC's SiGe UHS2-HV (high voltage) wafer process. This process results in devices that combine the low noise/high gain performance of GaAs with the cost advantages of silicon. NESG2107 transistors in 19 and M33 packages are in stock and available now. The NESG2107 chip is also available in a twin transistor package in combination with a variety of other NEC chips.
Source: California Eastern Laboratories