NEC Compound Semiconductor Devices Ltd. And Ansoft Deliver New Device Library

Source: Ansoft LLC

Shin-Yokohama, Japan - Ansoft Corporation announced the release of a new device library based on NEC Compound Semiconductor Devices Ltd.'s high-performance transistor technologies. The combination of NEC's device technology and Ansoft's advanced simulation technologies enables a new generation of advanced low-noise, high-gain radio frequency (RF) and integrated circuit (IC) designs.

"These devices are key building blocks in the development of microwave frequency circuits and subsystems found in today's high-frequency communication devices," said Mr. Eiji Nakamoto, vice president, Ansoft Japan. "Supplying vendor-authorized device models directly as ready-to-use components benefits Nexxim® and Ansoft Designer® customers by providing easy access to highly accurate models for NEC's powerful device technology."

The NEC Device Library includes the following nonlinear device models for Nexxim:

  • Low-Noise Bipolar Transistors: Gummel-Poon
  • Hetero-junction Bipolar Transistors (HBTs): Gummel-Poon
  • HJ-FET: EEHEMT1

The Library also includes the following S-parameter models and device footprints for Nexxim and Ansoft Designer:

  • Wide-Band Amplifier
  • Dual-Gate MES/MOS FET
  • Low-Noise Bipolar Transistor
  • SiGeHBT Twin Transistor
  • Low-Noise GaAs FET
  • HBT
  • HJ-FET
  • ower Transistor

The libraries are available and easily downloaded from NEC's Web site and configured for use within Nexxim and Ansoft Designer. This site provides Nexxim and Ansoft Designer users with the ability to search for components by name, performance data or other specifications. NEC will maintain model support and upgrades, while Ansoft will address all customer support for Nexxim and Ansoft Designer.

SOURCE: Ansoft LLC