Product/Service

MwT- PH15 (28 GHz Medium Power AlGaAs/InGaAs PHEMT)

Source: MicroWave Technology, Inc.
The MwT-PH15 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron gate length and 630 micron gate width make it ideally suited for applications requiring high-gain and power up to 28 GHz frequency range with power outputs ranging from 500 to 700 milli-watts.
The MwT-PH15 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron gate length and 630 micron gate width make it ideally suited for applications requiring high-gain and power up to 28 GHz frequency range with power outputs ranging from 500 to 700 milli-watts. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using MwT's reliable metal systems and all devices from each wafer are screened to insure reliability. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.

Features:

  • +28.5 dBm typical Output Power at 12 GHz
  • 12 dB typical Small Signal Gain at 12 GHz
  • 60% typical PAE at 12 GHz
  • 0.3 x 630 Micron Refractory Metal/Gold Gate
  • Sorted into 10 mA Idss Bin Ranges
  • Excellent for High Power, Gain, and High Power Added Efficiency
  • Ideal for Commercial, Military, Hi-Rel Space Applications

Downloads

  • MwT- PH15 Datasheet
  • MwT Catalog