Product/Service

MwT-GK K-Band 18-26.5GHz Gunn Diode

Source: MicroWave Technology, Inc.
Based on MwT preparatory epitaxial profile design and process technology, MwT-GK is a Gunn diode device targeted at CW and pulsed K-band (18-26.5 GHz) frequency source applications.
Based on MwT preparatory epitaxial profile design and process technology, MwT-GK is a Gunn diode device targeted at CW and pulsed K-band (18-26.5 GHz) frequency source applications. The device has output power of 13 dBm with excellent chirp performance in pulsed operation mode. The device is fabricated at MwT GaAs fab using process technologies with proven reliability and robustness. MwT-GK is available in die or packaged form.

Features:

  • K-band (18-26.5 GHz) frequency source applications
  • Excellent frequency chirp performance
  • Pulsed or CW operation
  • 20 years of proven performance & reliability
  • Processed in MwT captive GaAs fab
  • Available in packaged or die form

Typical Applications:

  • Motion Detection and Surveillance
  • Microwave Transmitter and Receiver
  • Military Radar
  • Gunn Diode Oscillators
  • Radar Detectors

Downloads

  • MwT-GK Datasheet
  • MwT Catalog