MTT-S: Schottky Barrier Diode

The MA4E2038 GaAs beam lead Schottky barrier diode has been launched for applications operating between 50 and 100 GHz. This product sports a total capacitance of 0.032 pF and a 0.015 typical junction capacitance. It also offers a 10 W maximum series resistance, a 0.7 V typical forward voltage, a 4.5 V typical reverse breakdown voltage, a +20 dBm incident local oscillator power, and a +20 dBm incident RF power.

N/A, 011 Pawtucket Blvd., Lowell, MA 01853. Phone: 978-442-5000; Fax: 978-442-5350