MTT-S 2008: TAEC Announces PAs For Ku-Band SATCOM And X-Band Radar Applications
Irvine, CA - Toshiba America Electronic Components, Inc. (TAEC) announced the addition of two new gallium nitride (GaN) semiconductor High Electron Mobility Transistors (HEMTs), developed by Toshiba Corp. (Toshiba), to its power amplifier product family. The new products will be on display at the 2008 IEEE MTT-S International Microwave Symposium, which will be held June 15 through 20 in Atlanta, Georgia.
The first GaN HEMT for satellite communication applications from Toshiba, the Ku-band TGI1414-50L, operates in the 14.0GHz1 to 14.5GHz range with output power of 50W. The device features output power of 47.0dBm (typ.), with 42dBm input power, linear gain of 8.0dB (typ.) 2 and drain current of 5.0 Amps (typ.) 2. Targeted applications are SATCOM applications, such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT). An extended Ku-band power amplifier for the 13.75GHz to 14.5GHz range will be released in the near future.
The X-band TGI0910-50 operates in the 9.5GHz to 10.5GHz range with output power of 50W. It features output power of 47.0dBm (typ.)2 with 41dBm input power, linear gain of 9.0dB (typ.)2 and drain current of 4.5 Amps (typ.) 2. Targeted applications include Doppler radar that can detect the motion of rain droplets and intensity of precipitation for severe weather warning, and Doppler radar for border surveillance and security.
"The expansion of our GaN power amplifier family brings higher power and higher gain features to microwave designers, which reduces heat sink requirements with smaller part counts and enables smaller systems with higher performance and efficiency," said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC's Discrete Business Unit. "Additional GaN C-band SATCOM and Ku-band devices for broadband and radar applications are in development."
Technical Specifications
| Product Characteristics | TGI1414-50L | TGI0910-50 |
|---|---|---|
| Frequency | 14.0 – 14.5GHz | 9.5–10.5GHz |
| Output Power, Pout(typ.) | 47.0dBm | 47.0dBm |
| Linear Gain, GL(typ.) | 8.0dB | 9.0dB |
| Drain Current, VDS/IDS(typ.) |
+24V/5.0A | +24V/4.5A |
| Efficiency | 29% | 35% |
| Package | 7- AA04A | 7- AA04A |
Toshiba Microwave Product Overview
Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include personal communications systems (PCS), multi channel distribution systems (MMDS), Wireless LAN/WAN systems, point-to-point terrestrial microwave radio, wireless local loop (WLL), satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems, mobile communications, and other communication systems. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial point-to-point communications, radar systems and medical uses.
SOURCE: Toshiba America Electronic Components, Inc.