MTT-S 2008: Nitronex Launches Initiative To Educate The Industry On GaN-on-Si Technology

Atlanta, GA - Building on its position as the leading producer of gallium nitride on silicon (GaN-on-Si) RF devices, Nitronex has launched an initiative to educate the industry regarding the use of this unique technology. Nitronex's new GaN Essentials education center provides visitors with a better understanding of how to evaluate performance of, and design with, GaN in RF power applications.

"As the leading worldwide GaN-on-Si supplier, our engineering, marketing and sales teams receive many inquiries concerning our GaN technology. We took the most common questions and developed a set of application notes that answer them," said Ray Crampton, Nitronex Director of Marketing. "Evaluating and designing with a new technology can raise new questions and pose new challenges. The GaN Essentials collection is part of our efforts to make designing with GaN as easy as possible. We will continue to develop application notes and update the GaN Essentials education center to address the industry's questions."

The GaN Essentials education center is available at www.nitronex.com/ganessentials.html and initially discusses the following topics:

• Comparison of LDMOS and GaN for RF power amplifiers and basic concepts and approximations used for LDMOS with the equivalent information for GaN products
• Comparisons of substrates used for GaN RF devices since the choice of substrate affects affordability, availability, reliability and performance
• Thermal design data and simulations for GaN technology in plastic and ceramic air cavity packages
• Proper biasing, sequencing, and temperature compensation of GaN HEMTs
• Broadband design, methodology and performance of RF power amplifiers utilizing GaN technology

For more information about Nitronex's GaN Essentials education center or GaN-on-Si products, visit www.nitronex.com.

SOURCE: Nitronex