Mitsubishi Electric To Expand Product Range Of Ku-Band GaN HEMTs

Mitsubishi Electric Corporation announced today that two new 13.75-14.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) will be added to the company's GaN HEMT lineup for satellite-communication (SATCOM) earth stations. The two products, one for multi-carrier¹ communication and the other for single-carrier² communication, will support increased data-transmission capacity and smaller earth stations. Sales will begin on March 15.

Ku-band satellite systems are increasingly being deployed for emergency communication during natural disasters and for satellite news gathering (SNG) by TV broadcasters in remote areas where cable networks do not exist. Meanwhile, in addition to the growing use of conventional single-carrier communication, multi-carrier communication is increasingly needed for fast, high-volume communication and to support the downsizing of mobile stations for purposes such as SNG. So far, Mitsubishi Electric has introduced five GaN HEMTs for multi-carrier and single-carrier SATCOM earth stations. The two new 30W GaN HEMTs will enable more flexible amplifier designs, including for rated power levels and the use of GaN drivers. They also will support the downsizing of earth stations as well as faster, larger-capacity satellite communication.

Sales Schedule

Product Features

1)Low IMD3 with wide offset frequencies of up to 400MHz for large-capacity SATCOM

The MGFK45G3745A for multi-carrier communications delivers low IMD3³ with wide offset frequencies⁴ of up to 400MHz for large-capacity, high-speed satellite communication.

2)Expanded GaN HEMT lineup will enable smaller SATCOM earth stations

Multi-carrier communication (new model in bold)

Single-carrier communication (new model in bold)

¹Voice, video and data communication method that uses carrier signals of various frequencies

²Communication method that uses a single-frequency carrier signal

³Frequency difference between two-tone signals, used in IMD3 measurements.

⁴Third-order intermodulation distortion, a measure of amplifier distortion in the case of two-tone signals.