Mimix Launches 26-31 GHz GaAs MMIC Power Amplifier Optimized For Linear Operation

Amplifier includes on-chip temperature compensated output power detector with +36 dBm OIP3

Houston -- Mimix Broadband, Inc. has introduced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) four stage power amplifier, which includes an on-chip temperature compensated output power detector and is optimized for linear operation. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this power amplifier uses a balanced design to achieve good output match and covers the 26 to 31 GHz frequency bands. The device has a small signal gain of 32 dB with +36 dBm output third order intercept point.

This amplifier, identified as 29MPA0373, is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS) and SATCOM.

"The high value of gain and linearity provided in this device makes it suitable for point-to-point microwave and Ka band satellite up-link applications," Dr. Jim Harvey, CTO of Mimix Broadband, stated. "Users can employ the on-chip temperature compensated power detector to facilitate power level control in transmitters."

Mimix performs 100% on-wafer RF, DC and output power testing on the 29MPA0373, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, and production quantities are available 6-8 weeks ARO.

Click here to download the 29MPA0373 datasheet.

Source: Mimix Broadband